The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jan. 25, 2024
Sicrystal Gmbh, Nuremberg, DE;
Bernhard Ecker, Nuremberg, DE;
Ralf Müller, Nuremberg, DE;
Philipp Schuh, Nuremberg, DE;
Matthias Stockmeier, Nuremberg, DE;
Michael Vogel, Nuremberg, DE;
SICRYSTAL GMBH, Nuremberg, DE;
Abstract
The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible () having a longitudinal axis () and comprising a fixing means for at least one seed crystal () and at least one source material compartment () for containing a source material (); a heating system being formed to generate an irregular temperature field around a circumference of the crucible () and/or along the longitudinal axis of the crucible (); a thermal insulation unit () at least partly surrounding the crucible (), wherein the thermal insulation unit () has a radially and/or axially asymmetric form to compensate the irregular temperature field.