The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
May. 10, 2019
Sicrystal Gmbh, Nuremberg, DE;
Michael Vogel, Nuremberg, DE;
Bernhard Ecker, Nuremberg, DE;
Ralf Müller, Zirndorf, DE;
Arnd-Dietrich Weber, Forchheim, DE;
Matthias Stockmeier, Egloffstein, DE;
SICRYSTAL GMBH, Nuremberg, DE;
Abstract
The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. The silicon carbide substrate () comprises a main surface () and a circumferential end face surface () which is essentially perpendicular to the main surface (), and a chamfered peripheral region (), wherein a first bevel surface () of the chamfered peripheral region () includes a first bevel angle (a) with said main surface (), and wherein a second bevel surface () of the chamfered peripheral region () includes a second bevel angle (a) with said end face surface (), wherein, in more than 75% of the peripheral region, said first bevel angle (a) has a value in a range between 20° and 50°, and said second bevel angle (a) has a value in a range between 45° and 75°.