The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2022
Filed:
Jun. 05, 2020
Applicant:
Sicrystal Gmbh, Nuremberg, DE;
Inventors:
Erwin Schmitt, Großenseebach, DE;
Michael Vogel, Nuremberg, DE;
Assignee:
SiCrystal GmbH, Nuremberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01); C30B 25/16 (2006.01); C30B 25/08 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C30B 25/08 (2013.01); C30B 29/36 (2013.01); C30B 35/002 (2013.01);
Abstract
A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.