The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Dec. 20, 2022
Applicant:
Sicrystal Gmbh, Nuremberg, DE;
Inventors:
Erwin Schmitt, Großenseebach, DE;
Michael Vogel, Nuremberg, DE;
Assignee:
SiCrystal GmbH, Nuremberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C30B 23/00 (2006.01); C30B 23/06 (2006.01); C30B 29/36 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 23/005 (2013.01); C30B 23/063 (2013.01); C30B 29/36 (2013.01); C30B 35/002 (2013.01);
Abstract
A method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport (PVT) includes connecting a pair of reactors to a vacuum pump system by a common vacuum channel and creating and/or controlling, with the vacuum pump system, a common gas phase condition in the inner chambers of the pair of reactors. Each reactor has an inner chamber adapted to accommodate a PVT growth structure for growth of a semiconductor single crystal.