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Bloomington, MN, United States of America

Polar Semiconductor, Inc.

USPTO Granted Patents = 35

Trademarks = 3

Forward Citations = 153

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33 inventors (with patents filed for the assignee):

Steven L Kosier (8 out of 15 patents)

Don Rankila (6 out of 6 patents)

Peter West (6 out of 7 patents)

4. Tatsuya Kamimura (5 out of 5 patents)

5. Gregory J Rausch (5 out of 10 patents)

6. Noel P Hoilien (5 out of 8 patents)

7. Michael J Gaboury (4 out of 28 patents)

8. Dosi Dosev (3 out of 3 patents)

9. Kurt Kimber (3 out of 5 patents)

10. Josh Wibben (3 out of 3 patents)

11. Shohei Osaka (3 out of 15 patents)

12. John Charles Beckman (3 out of 4 patents)

13. Shunsuke Fukunaga (2 out of 12 patents)

14. Thomas S Chung (2 out of 2 patents)

15. David Litfin (2 out of 4 patents)

35 patents: Sort by Forward Citations

1. 12142481 - Forming passivation stack having etch stop layer (2024-11-12),

2. 12015079 - Transistor with single termination trench having depth more than 10 microns (2024-06-18),

3. 11329147 - Insulated gate bipolar transistor with epitaxial layer formed on recombination region (2022-05-10),

4. 11264496 - Transistor with buried p-field termination region (2022-03-01),

5. 11245006 - Trench semiconductor device layout configurations (2022-02-08),

6. 10896885 - High-voltage MOSFET structures (2021-01-19),

7. 10580861 - Trench semiconductor device layout configurations (2020-03-03),

8. 10388783 - Floating-shield triple-gate MOSFET (2019-08-20),

9. 10332992 - Semiconductor device having improved trench, source and gate electrode structures (2019-06-25),

10. 10153366 - LDMOS transistor with lightly-doped annular RESURF periphery (2018-12-11),

11. 10141440 - Drift-region field control of an LDMOS transistor using biased shallow-trench field plates (2018-11-27),

12. 9899343 - High voltage tolerant bonding pad structure for trench-based semiconductor devices (2018-02-20),

13. 9818828 - Termination trench structures for high-voltage split-gate MOS devices (2017-11-14),

14. 9818742 - Semiconductor device isolation using an aligned diffusion and polysilicon field plate (2017-11-14),

15. 9704765 - Method of controlling etch-pattern density and device made using such method (2017-07-11),

Polar Semiconductor, Inc. is a leading global semiconductor manufacturer specializing in the design, development, and production of high-performance integrated circuits. With a focus on innovation and quality, the company offers a wide range of semiconductor solutions for various applications including automotive, industrial, consumer electronics, and telecommunications. Polar Semiconductor is committed to delivering cutting-edge technologies and exceptional customer value through its advanced manufacturing facilities and experienced team of professionals.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

35 Patents

#6 in Bloomington, MN

#271 in Minnesota

#9,423 in US

#18,611 in the World

Bloomington, MN, United States of America

Polar Semiconductor, Inc.

Forward Citations = 153

33 inventors:

Steven L Kosier (8 out of 15 patents)

Don Rankila (6 out of 6 patents)

Peter West (6 out of 7 patents)

4. Tatsuya Kamimura (5 out of 5 patents)

5. Gregory J Rausch (5 out of 10 patents)

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