Company Filing History:
Years Active: 2018
Title: Innovations of Thomas S. Chung in LDMOS Technology
Introduction
Thomas S. Chung is an accomplished inventor based in Lakeville, MN (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of LDMOS (Lateral Double-Diffused Metal-Oxide-Semiconductor) devices. With a total of two patents to his name, Chung's work focuses on optimizing electric field profiles within LDMOS devices to enhance their performance.
Latest Patents
Chung's latest patents include innovative methods for controlling electric field profiles within LDMOS devices. One of his patents describes an LDMOS transistor with a lightly-doped annular RESURF periphery. This invention relates to controlling the electric field profile within a drift region of an LDMOS device using first and second RESURF regions. The first RESURF region extends from the source end toward the drain end of the device, forming a metallurgical junction with the drift region. The second RESURF layer extends from the drain end toward the source end, optimizing the electric field and reducing maximum electric field strength between the second RESURF layer and the body contact.
Another notable patent focuses on drift-region field control of an LDMOS transistor using biased shallow-trench field plates. This invention involves controlling the electric field profile within the drift region by depleting majority carriers using biased field plates located in trenches. The design allows for substantial depletion of majority carriers, optimizing the breakdown-voltage and on-resistance characteristics of the LDMOS device.
Career Highlights
Chung is currently employed at Polar Semiconductor, Inc., where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing LDMOS technology, which is crucial for various applications in power electronics.
Collaborations
Chung collaborates with talented professionals in his field, including Steven L. Kosier and Noel Hoillien. Their combined expertise contributes to the ongoing development of cutting-edge semiconductor technologies.
Conclusion
Thomas S. Chung's contributions to LDMOS technology through his innovative patents demonstrate his commitment to advancing the semiconductor industry. His work not only enhances device performance but also paves the way for future innovations in this critical field.