The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
May. 12, 2020
Applicant:
Polar Semiconductor, Llc, Bloomington, MN (US);
Inventor:
Noel Hoilien, Minneapolis, MN (US);
Assignee:
Polar Semiconductor, LLC, Bloomington, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/761 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 21/26513 (2013.01); H01L 21/761 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/66348 (2013.01);
Abstract
In one aspect, a method of fabricating a transistor includes implanting ions into a first portion of a second epitaxial layer to form a recombination region, depositing a second portion of the second epitaxial layer having an n-type dopant on the recombination region, and forming trenches in the second portion of the second epitaxial layer.