The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Apr. 20, 2020
Applicant:
Polar Semiconductor, Llc, Bloomington, MN (US);
Inventor:
Noel Hoilien, Minneapolis, MN (US);
Assignee:
Polar Semiconductor, LLC, Bloomington, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/02129 (2013.01); H01L 21/02293 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01);
Abstract
In one aspect, a method of fabricating a transistor includes depositing a first epitaxial layer, depositing a second epitaxial layer on the first epitaxial layer, implanting the second epitaxial layer to form a p-field termination region, depositing a third epitaxial layer on the p-field termination layer and forming trenches in the third epitaxial layer. The trenches include a trench gate of the transistor and a termination trench.