The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Mar. 09, 2016
Polar Semiconductor, Llc, Bloomington, MN (US);
Sanken Electric Co., Ltd., Saitama, JP;
Peter West, Minneapolis, MN (US);
Steven Kosier, Lakeville, MN (US);
Tatsuya Kamimura, St. Louis Park, MN (US);
Don Rankila, Farmington, MN (US);
Polar Semiconductor, LLC, Bloomington, MN (US);
SANKEN ELECTRIC CO., LTD., Saitama, JP;
Abstract
Apparatus and associated methods relate to a bonding pad structure for a trench-based semiconductor device. The bonding pad structure reduces a peak magnitude of the electric field between a metal bonding pad and the underlying semiconductor. The bonding pad structure includes a plurality of trenches vertically extending from a top surface of a semiconductor. Each of the plurality of trenches has dielectric sidewalls and a dielectric bottom, the dielectric sidewalls and dielectric bottom electrically isolating a conductive core within each of the trenches from a region of semiconductor outside of and adjacent to each of the plurality of trenches. The bonding pad structure includes a metal bonding pad disposed above the plurality of trenches, the metal bonding pad electrically isolated from the region of semiconductor outside of the trenches. The conductive core can be biased to reduce the magnitude of the field between adjacent trenches.