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For the Inventor, By the Inventor

Saratoga, CA, United States of America

Zhong Qiang Hua

USPTO Granted Patents = 25 

Average Co-Inventor Count = 5.6

ph-index = 6

Forward Citations = 755(Granted Patents)


Location History:

  • Santa Clara, CA (US) (2002)
  • San Jose, CA (US) (2006 - 2009)
  • Saratoga, CA (US) (2004 - 2023)

Company Filing History:

goldMedal24 out of 13,684 
 
Applied Materials, Inc.
 patents
silverMedal1 out of 916 
 
Varian Semiconductor Equipment Associates, Inc.
 patents

Years Active: 2002-2023

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25 patents (USPTO):
1. 11631591 - Methods for depositing dielectric material (2023-04-18),
2. 11289312 - Physical vapor deposition (PVD) chamber with in situ chamber cleaning capability (2022-03-29),
3. 11114306 - Methods for depositing dielectric material (2021-09-07),
4. 11049701 - Biased cover ring for a substrate processing system (2021-06-29),
5. 10858735 - Alignment systems employing actuators providing relative displacement between lid assemblies of process chambers and substrates, and related methods (2020-12-08),
6. 10858727 - High density, low stress amorphous carbon film, and process and equipment for its deposition (2020-12-08),
7. 10811257 - Techniques for forming low stress etch-resistant mask using implantation (2020-10-20),
8. 10570506 - Method to improve film quality for PVD carbon with reactive gas and bias power (2020-02-25),
9. 10566177 - Pulse shape controller for sputter sources (2020-02-18),
10. 10435786 - Alignment systems employing actuators providing relative displacement between lid assemblies of process chambers and substrates, and related methods (2019-10-08),
11. 10128337 - Methods for forming fin structures with desired profile for 3D structure semiconductor applications (2018-11-13),
12. 9809881 - Method and apparatus for multizone plasma generation (2017-11-07),
13. 8404583 - Conformality of oxide layers along sidewalls of deep vias (2013-03-26),
14. 8114761 - Method for doping non-planar transistors (2012-02-14),
15. 7967913 - Remote plasma clean process with cycled high and low pressure clean steps (2011-06-28),

Title: Zhong Qiang Hua: Pioneering Inventor in Semiconductor Technology

Introduction:

Zhong Qiang Hua is a pioneering inventor based in Saratoga, CA, whose passion for innovation and relentless drive to solve complex problems have solidified his reputation in the ever-evolving landscape of technology. With an impressive portfolio of 25 patents, Zhong Qiang Hua is making significant contributions to the field of semiconductor technology.

Latest Patents:

Among his latest patents are innovative methods for depositing dielectric material using RF bias pulses and remote plasma source deposition for manufacturing semiconductor devices. These methods are particularly beneficial for filling openings with high aspect ratios in semiconductor applications. Additionally, Zhong Qiang Hua has developed a physical vapor deposition (PVD) chamber with in situ chamber cleaning capability, enhancing efficiency in substrate processing.

Career Highlights:

Having worked at renowned companies such as Applied Materials, Inc., and Varian Semiconductor Equipment Associates, Inc., Zhong Qiang Hua has gained invaluable experience in the semiconductor industry. His expertise in developing cutting-edge technologies has led to the successful implementation of novel processes in semiconductor manufacturing.

Collaborations:

Throughout his career, Zhong Qiang Hua has collaborated with industry experts such as Ellie Y Yieh and Srinivas D Nemani. These collaborations have been instrumental in driving innovation and pushing the boundaries of semiconductor technology.

Conclusion:

Zhong Qiang Hua's dedication to innovation and his commitment to solving complex technological challenges have established him as a leading inventor in the semiconductor industry. With a remarkable track record of patents and a history of successful collaborations, Zhong Qiang Hua continues to shape the future of semiconductor technology through his groundbreaking inventions.

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