The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Nov. 22, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Bhargav Citla, Fremont, CA (US);

Jingjing Liu, Milpitas, CA (US);

Zhong Qiang Hua, Saratoga, CA (US);

Chentsau Ying, Cupertino, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Ellie Y. Yieh, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
C23C 14/35 (2013.01); C23C 14/0036 (2013.01); C23C 14/0605 (2013.01); C23C 14/345 (2013.01); C23C 14/3485 (2013.01); H01J 37/3408 (2013.01); H01J 37/3467 (2013.01); H01L 21/02115 (2013.01); H01L 21/02266 (2013.01); H01L 21/0332 (2013.01);
Abstract

Embodiments of the present disclosure generally describe methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a high power impulse magnetron sputtering (HiPIMS) process, and in particular, biasing of the substrate during the deposition process and flowing a nitrogen source gas and/or a hydrogen source gas into the processing chamber in addition to an inert gas to improve the morphology and film stress of the deposited amorphous carbon layer.


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