The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Feb. 25, 2011
Zhong Qiang Hua, Saratoga, CA (US);
Manuel A. Hernandez, Santa Clara, CA (US);
Lei Luo, San Jose, CA (US);
Kedar Sapre, Mountain View, CA (US);
Zhong Qiang Hua, Saratoga, CA (US);
Manuel A. Hernandez, Santa Clara, CA (US);
Lei Luo, San Jose, CA (US);
Kedar Sapre, Mountain View, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for improving conformality of oxide layers along sidewalls of vias in semiconductor substrates includes forming a nitride layer over an upper surface of a semiconductor substrate and forming a via extending through the nitride layer and into the semiconductor substrate. The via may have a depth of at least about 50 μm from a top surface of the nitride layer and an opening of less than about 10 μm at the top surface of the nitride layer. The method also includes forming an oxide layer over the nitride layer and along sidewalls and bottom of the via. The oxide layer may be formed using a thermal chemical vapor deposition (CVD) process at a temperature of less than about 450° C., where a thickness of the oxide layer at the bottom of the via is at least about 50% of a thickness of the oxide layer at the top surface of the nitride layer.