San Jose, CA, United States of America

Lei Luo

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Applied Materials, Inc.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lei Luo. Retrieved from https://idiyas.com/inventor/lei-luo-v9fhptah

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2013

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2 patents (USPTO):Explore Patents

Title: Lei Luo - Innovator in Semiconductor Technology

Introduction

Lei Luo is a prominent inventor based in San Jose, CA, specializing in semiconductor technology. He holds a total of 2 patents that contribute significantly to advancements in the field. His work focuses on improving the properties of dielectric materials and enhancing the conformality of oxide layers in semiconductor substrates.

Latest Patents

Lei Luo's latest patents include innovative methods for forming dielectric liner layers on semiconductor substrates. One of his patents describes a method that involves flowing a phosphorus-containing precursor along with silicon and oxygen-containing precursors over the substrate to deposit a dielectric material. This method allows for the deposition of the dielectric material along a field region and within at least one via on the substrate, achieving a depth of at least 1 µm. Additionally, the method includes forming a liner layer within the via, which consists of silicon oxide doped with phosphorus. The thickness of the liner layer at the upper portion of the via sidewall is designed to be less than about five times the thickness at the lower portion.

Another significant patent focuses on improving the conformality of oxide layers along the sidewalls of deep vias in semiconductor substrates. This method involves forming a nitride layer over the upper surface of a semiconductor substrate and creating a via that extends through the nitride layer into the substrate. The via has a depth of at least about 50 µm and an opening of less than about 10 µm at the top surface of the nitride layer. The oxide layer is formed using a thermal chemical vapor deposition (CVD) process at a temperature of less than about 450° C., ensuring that the thickness of the oxide layer at the bottom of the via is at least about 50% of the thickness at the top surface of the nitride layer.

Career Highlights

Lei Luo is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His contributions to the field have been recognized through his innovative patents and the impact they have on semiconductor manufacturing processes.

Collaborations

Lei has collaborated with notable coworkers, including Manuel Hernandez and Kedar Sapre, who have contributed to his research and development efforts in semiconductor technology.

Conclusion

In summary, Lei Luo is an influential inventor whose work in semiconductor technology has led to significant advancements in the field. His patents reflect a commitment to innovation and

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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