The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2012

Filed:

Jul. 26, 2010
Applicants:

Tushar V. Mandrekar, San Jose, CA (US);

Shankar Venkataraman, Santa Clara, CA (US);

Zhong Qiang Hua, Saratoga, CA (US);

Manuel A. Hernandez, Santa Clara, CA (US);

Inventors:

Tushar V. Mandrekar, San Jose, CA (US);

Shankar Venkataraman, Santa Clara, CA (US);

Zhong Qiang Hua, Saratoga, CA (US);

Manuel A. Hernandez, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.


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