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For the Inventor, By the Inventor

Niskayuna, NY, United States of America

Yunpeng Yin

USPTO Granted Patents = 83 

Average Co-Inventor Count = 4.3

ph-index = 13

Forward Citations = 475(Granted Patents)


Inventors with similar research interests:


Location History:

  • Guilderland, NY (US) (2012 - 2014)
  • Albany, NY (US) (2014)
  • Armonk, NY (US) (2013 - 2017)
  • Niskayuna, NY (US) (2012 - 2020)
  • Schenectady, NY (US) (2015 - 2020)

Company Filing History:

goldMedal78 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal8 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal6 out of 7,524 
 
Renesas Electronics Corporation
 patents
where one patent can have more than one assignee

Years Active: 2012-2020

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83 patents (USPTO):
1. 10566454 - Self-aligned contact process enabled by low temperature (2020-02-18),
2. 10529858 - FinFET with merge-free fins (2020-01-07),
3. 10340368 - Fin formation in fin field effect transistors (2019-07-02),
4. 10170471 - Bulk fin formation with vertical fin sidewall profile (2019-01-01),
5. 10170327 - Fin density control of multigate devices through sidewall image transfer processes (2019-01-01),
6. 10168075 - Critical dimension shrink through selective metal growth on metal hardmask sidewalls (2019-01-01),
7. 10164060 - Work function metal fill for replacement gate fin field effect transistor process (2018-12-25),
8. 10147803 - Work function metal fill for replacement gate fin field effect transistor process (2018-12-04),
9. 10141428 - Fin formation in fin field effect transistors (2018-11-27),
10. 10037944 - Self-aligned contact process enabled by low temperature (2018-07-31),
11. 10020303 - Methods for forming FinFETs having epitaxial Si S/D extensions with flat top surfaces on a SiGe seed layer (2018-07-10),
12. 9997367 - Non-lithographic line pattern formation (2018-06-12),
13. 9991258 - FinFETs with non-merged epitaxial S/D extensions having a SiGe seed layer on insulator (2018-06-05),
14. 9991255 - FinFETs with non-merged epitaxial S/D extensions on a seed layer and having flat top surfaces (2018-06-05),
15. 9985030 - FinFET semiconductor device having integrated SiGe fin (2018-05-29),

Title: The Innovative Journey of Inventor Yunpeng Yin

Introduction: Yunpeng Yin, a talented inventor based in Niskayuna, NY (US), has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Yunpeng Yin holds several recent patents in the areas of artificial intelligence, renewable energy, and advanced materials. His most recent patent involves a cutting-edge algorithm for optimizing energy consumption in smart buildings.

Career Highlights: With a background in electrical engineering and a passion for sustainable solutions, Yunpeng Yin has worked for over two decades in various research institutions and tech companies. He has led teams in developing innovative technologies that have revolutionized the industry.

Collaborations: Throughout his career, Yunpeng Yin has collaborated with leading experts in the field, including researchers from top universities, engineers from renowned companies, and patent attorneys specializing in intellectual property protection. These collaborations have resulted in groundbreaking inventions that have been patented successfully.

Conclusion: Yunpeng Yin's dedication to innovation and his relentless pursuit of technological advancement have established him as a prominent figure in the world of inventors. His work continues to inspire future generations of innovators to push the boundaries of what is possible in the realm of technology.

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