The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Oct. 13, 2016
International Business Machines Corporation, Armonk, NY (US);
Renesas Electronics Corporation, Kanagawa, JP;
Hong He, Schenectady, NY (US);
Shogo Mochizuki, Tokyo, JP;
Chiahsun Tseng, Wynantskill, NY (US);
Chun-Chen Yeh, Clifton Park, NY (US);
Yunpeng Yin, Schenectady, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Abstract
Semiconductor devices include multiple fins formed in trenches in an insulator layer. Each of the plurality of fins has a uniform crystal orientation and a fin cap in a source and drain region that extends vertically and laterally beyond the trench. The fin caps of the respective fins are separate from one another. A gate structure is formed over the fins that leaves the source and drain regions exposed. The insulator layer at least partially covers a sidewall of the gate structure.