The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
Dec. 23, 2014
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Hong He, Schenectady, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
Chiahsun Tseng, Wynantskill, NY (US);
Chun-chen Yeh, Clifton Park, NY (US);
Yunpeng Yin, Niskayuna, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of fabricating a semiconductor device includes forming at least one semiconductor fin on a semiconductor substrate. A cladding layer is epitaxially grown on a portion of the at least one semiconductor fin. The cladding layer is oxidized such that r such that ions are condensed therefrom and are diffused into the at least one semiconductor fin while the cladding layer is converted to an oxide layer. The oxide layer is removed to expose the at least one semiconductor fin having a diffused fin portion that enhances electron hole mobility therethrough.