The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Feb. 28, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hsueh-Chung H. Chen, Cohoes, NY (US);

Hong He, Schenectady, NY (US);

Juntao Li, Cohoes, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Yunpeng Yin, Niskayuna, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); F24S 30/452 (2018.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); F24S 20/61 (2018.01); E04B 1/343 (2006.01); E04B 1/346 (2006.01); E04B 7/16 (2006.01); F24S 30/00 (2018.01);
U.S. Cl.
CPC ...
F24S 30/452 (2018.05); E04B 1/346 (2013.01); E04B 1/34357 (2013.01); E04B 7/163 (2013.01); F24S 20/61 (2018.05); H01L 21/31144 (2013.01); H01L 21/7684 (2013.01); H01L 21/76805 (2013.01); H01L 21/76807 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76816 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01); F24S 2030/18 (2018.05); Y02A 30/22 (2018.01); Y02B 10/20 (2013.01); Y02E 10/47 (2013.01);
Abstract

A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.


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