The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Mar. 21, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Kangguo Cheng, Schenectady, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Hong He, Schenectday, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Yunpeng Yin, Niskayuna, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/225 (2006.01); H01L 29/78 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/02532 (2013.01); H01L 21/2254 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/823431 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract
A method of forming a semiconductor device that includes forming a silicon including fin structure and forming a germanium including layer on the silicon including fin structure. Germanium is then diffused from the germanium including layer into the silicon including fin structure to convert the silicon including fin structure to silicon germanium including fin structure.