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Yue-Song He

USPTO Granted Patents = 57 (Patent Applications = 4)

EPO Patents = 3 (Patent Applications = 4)

Average Co-Inventor Count = 3.0

ph-index = 11

Forward Citations = 1,033(Granted Patents)

Forward Citations (Not Self Cited) = 1,028(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

39 out of 12,883

Advanced Micro Devices Corporation

Promos Technologies, Inc

Kilopass Technology, Inc.

8. 1 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 1999-2020

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Areas of Expertise:

Non-Volatile Memory

Flash Memory

Integrated Circuits

Resistive Switches

Short Channel Effects

Floating Gate Memories

Charge Storage Regions

Silicide Technology

Memory Array Design

High-K Dielectric Materials

NAND Flash Devices

Semiconductor Fabrication

57 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10573375 - Methods and circuitry for programming non-volatile resistive switches using varistors (2020-02-25),

2. 10447275 - Integrated circuits with programmable non-volatile resistive switch elements (2019-10-15),

3. 10269426 - Integrated circuits with complementary non-volatile resistive memory elements (2019-04-23),

4. 10090840 - Integrated circuits with programmable non-volatile resistive switch elements (2018-10-02),

5. 9793888 - Techniques for enabling and disabling transistor legs in an output driver circuit (2017-10-17),

6. 8896048 - Apparatus and method for source side implantation after spacer formation to reduce short channel effects in metal oxide semiconductor field effect transistors (2014-11-25),

7. 8330189 - One-time programmable memory and method for making the same (2012-12-11),

8. 8125020 - Non-volatile memory devices with charge storage regions (2012-02-28),

9. 7816726 - Nonvolatile memories with laterally recessed charge-trapping dielectric (2010-10-19),

10. 7808032 - Integrated circuits with substrate protrusions, including (but not limited to) floating gate memories (2010-10-05),

11. 7511333 - Nonvolatile memory cell with multiple floating gates and a connection region in the channel (2009-03-31),

12. 7452776 - Integrated circuits with substrate protrusions, including (but not limited to) floating gate memories (2008-11-18),

13. 7414281 - Flash memory with high-K dielectric material between substrate and gate (2008-08-19),

14. 7283398 - Method for minimizing false detection of states in flash memory devices (2007-10-16),

15. 7109555 - Method for providing short channel effect control using a silicide VSS line (2006-09-19),

Title: Innovations of Yue-Song He in Non-Volatile Resistive Switch Technologies

Introduction

Yue-Song He is a prominent inventor based in San Jose, California, known for his remarkable contributions to the field of integrated circuits and memory technology. With an impressive portfolio of 57 patents, He has significantly advanced the development of programmable resistive switch elements, paving the way for new possibilities in non-volatile memory systems.

Latest Patents

Two of his latest patents showcase innovative methods and circuitry for programming non-volatile resistive switches using varistors. The first patent details integrated circuits featuring an array of programmable resistive switch elements. Each switch element comprises two non-volatile resistive memory elements in series, paired with two varistors. The arrangement allows for programming of each memory element while ensuring reliability through carefully managed voltage levels, which comply with predetermined defects per million (DPM) criteria. The second patent, focusing on integrated circuits with programmable non-volatile resistive switch elements, describes configurations in a crossbar array that can be integrated within the user data path. This design includes driver circuits for selectively activating the switches, enhancing both functionality and efficiency in data management.

Career Highlights

Yue-Song He has held key positions at major technology firms, notably Advanced Micro Devices Corporation and Spansion LLC. His work in these leading companies reflects his dedication to advancing semiconductor technology and non-volatile memory systems. Throughout his career, He has developed and patented groundbreaking technologies that address the critical needs of the industry for efficient and reliable memory solutions.

Collaborations

He has collaborated with talented professionals such as Richard M. Fastow and Zhigang Wang. These collaborations have fostered a dynamic exchange of ideas and expertise, contributing to the successful development of innovative technologies in memory systems. Working alongside renowned colleagues has further enhanced He's ability to drive forward-thinking solutions in the field.

Conclusion

Yue-Song He stands out as a prominent figure in the realm of integrated circuits and memory technologies. His extensive array of patents, innovative approaches to non-volatile resistive switches, and collaborative efforts showcase his enduring impact on the industry. As technology continues to evolve, He’s innovations will undoubtedly play a critical role in shaping the future of memory solutions.

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