The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Jun. 15, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Richard G. Smolen, Redwood City, CA (US);
Rusli Kurniawan, Belmont, CA (US);
Yue-Song He, San Jose, CA (US);
Andy L. Lee, Sunnyvale, CA (US);
Jeffrey T. Watt, Palo Alto, CA (US);
Christopher J. Pass, San Jose, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H03K 19/00 (2006.01); H03K 19/177 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0011 (2013.01); G11C 13/0023 (2013.01); G11C 13/0038 (2013.01); G11C 13/0097 (2013.01); H03K 19/0002 (2013.01); H03K 19/1776 (2013.01);
Abstract
Integrated circuits with memory elements are provided. A memory element may include non-volatile resistive elements coupled together in a back-to-back configuration or an in-line configuration. Erase, programming, and margining operations may be performed on the resistive elements. Each of the resistive memory elements may receive a positive voltage, a ground voltage, or a negative voltage on either the anode or cathode terminal.