The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Dec. 20, 2007
Applicants:
Yue-song He, San Jose, CA (US);
Len Mei, San Jose, CA (US);
Inventors:
Yue-Song He, San Jose, CA (US);
Len Mei, San Jose, CA (US);
Assignee:
ProMOS Technologies Pte. Ltd., Singapore, SG;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
Charge-trapping dielectric () in a nonvolatile memory cell is recessed from under the control gate's edge and/or from an edge of a substrate isolation region. The recessed geometry serves to reduce or eliminate charge trapping in regions from which the charge may be difficult to erase.