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For the Inventor, By the Inventor

Hsinchu, Taiwan

Xiong-Fei Yu

This inventor holds 64 USPTO granted patents and 10 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiong-Fei Yu. Retrieved from https://idiyas.com/inventor/xiong-fei-yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 64 

% Patents Active = 89.1

Average Co-Inventor Count = 4.6

ph-index = 7

Forward Citations = 440(Granted Patents)

Forward Citations (Not Self Cited) = 401(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal63 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 481 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents

Years Active: 2012-2026

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Areas of Expertise:
Gate Structures
FinFET Devices
High-k Dielectric
Thermal Treatment
Patterning Techniques
Isolation Structures
Replacement Gate Methods
Barrier Layers
Oxide Liners
Doping Methods
Metal Gate Devices
Semiconductor Manufacturing
64 patents (USPTO):Explore Patents
1. 12666685 - Triple layer high-k gate dielectric stack for workfunction engineering (2026-06-23),
2. 12527073 - Gate structures in semiconductor devices (2026-01-13),
3. 12471361 - Semiconductor device (2025-11-11),
4. 12456623 - Replacement gate methods that include treating spacers to widen gate (2025-10-28),
5. 12376364 - Semiconductor device and method of manufacture (2025-07-29),
6. 12272557 - Semiconductor device and method (2025-04-08),
7. 12199158 - Non-conformal oxide liner and manufacturing methods thereof (2025-01-14),
8. 12170321 - Fin field effect transistor having conformal and non-conformal gate dielectric layers (2024-12-17),
9. 12015066 - Triple layer high-k gate dielectric stack for workfunction engineering (2024-06-18),
10. 11915979 - Gate structures in semiconductor devices (2024-02-27),
11. 11908695 - Replacement gate methods that include treating spacers to widen gate (2024-02-20),
12. 11862468 - Semiconductor device and method (2024-01-02),
13. 11756832 - Gate structures in semiconductor devices (2023-09-12),
14. 11699621 - Method for patterning a lanthanum containing layer (2023-07-11),
15. 11640977 - Non-conformal oxide liner and manufacturing methods thereof (2023-05-02),

Title: The Innovative Journey of Inventor Xiong-Fei Yu

Introduction: Xiong-Fei Yu, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Xiong-Fei Yu's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various electronic devices.

Career Highlights: With a background in electrical engineering, Xiong-Fei Yu has worked for several leading tech companies in Taiwan, where he honed his skills in research and development. His innovative approach to problem-solving has led to the successful creation of groundbreaking technologies.

Collaborations: Throughout his career, Xiong-Fei Yu has collaborated with top researchers and engineers in the industry, fostering a culture of innovation and creativity. His ability to work effectively in team settings has resulted in the successful implementation of various projects.

Conclusion: Xiong-Fei Yu's passion for innovation and his dedication to pushing the boundaries of technology make him a standout figure in the world of inventors. His contributions continue to shape the landscape of the tech industry, inspiring future generations of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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