The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jul. 28, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chia-Wei Hsu, Taipei, TW;
Pei Ying Lai, Hsinchu, TW;
Cheng-Hao Hou, Hsinchu, TW;
Xiong-Fei Yu, Hsinchu, TW;
Chi On Chui, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2025.01); H01L 21/3115 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10D 64/685 (2025.01); H01L 21/28158 (2013.01); H01L 21/3115 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/691 (2025.01); H10D 64/667 (2025.01);
Abstract
Semiconductor devices and methods which utilize a passivation dopant to passivate a gate dielectric layer are provided. The passivation dopant is introduced to the gate dielectric layer through a work function layer using a process such as a soaking method. The passivation dopant is an atom which may help to passivate electrical trapping defects, such as fluorine.