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For the Inventor, By the Inventor

Poughquag, NY, United States of America

William J Cote

USPTO Granted Patents = 42 


Average Co-Inventor Count = 3.3

ph-index = 24

Forward Citations = 2,062(Granted Patents)


Location History:

  • Essex Junction, VT (US) (1988 - 1990)
  • Poughkeepsie, NY (US) (2002 - 2012)
  • Poughquag, NY (US) (1993 - 2015)
  • Hopewell Junction, NY (US) (2013 - 2015)

Company Filing History:

goldMedal40 out of 164,197 
 
International Business Machines Corporation
 patents
silverMedal2 out of 52,735 
 
Kabushiki Kaisha Toshiba
 patents
bronzeMedal2 out of 12,883 
 
Advanced Micro Devices Corporation
 patents
4. 1 out of 832,843 
Other
 patents
where one patent can have more than one assignee

Years Active: 1988-2015

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Areas of Expertise:
Voltage Contrast Testing
finFET Technology
Bi-layer Hardmask
Plasma Damage Mitigation
Solder Bump Connections
Amine-based Contaminants
SOI Substrate Structures
Conductor Contacts Reliability
Intralevel Decoupling Capacitors
Chemical-Mechanical Planarization
Dual Damascene Structures
Endpoint Detection in Polishing
42 patents (USPTO):Explore Patents
1. 9213060 - Probe-able voltage contrast test structures (2015-12-15),
2. 9103875 - Probe-able voltage contrast test structures (2015-08-11),
3. 9097760 - Probe-able voltage contrast test structures (2015-08-04),
4. 8928057 - Uniform finFET gate height (2015-01-06),
5. 8748252 - Replacement metal gate transistors using bi-layer hardmask (2014-06-10),
6. 8481423 - Methods to mitigate plasma damage in organosilicate dielectrics (2013-07-09),
7. 8470706 - Methods to mitigate plasma damage in organosilicate dielectrics (2013-06-25),
8. 8350583 - Probe-able voltage contrast test structures (2013-01-08),
9. 8340800 - Monitoring a process sector in a production facility (2012-12-25),
10. 8293634 - Structures and methods for improving solder bump connections in semiconductor devices (2012-10-23),
11. 8288281 - Method for reducing amine based contaminants (2012-10-16),
12. 8242544 - Semiconductor structure having reduced amine-based contaminants (2012-08-14),
13. 7803708 - Method for reducing amine based contaminants (2010-09-28),
14. 7732866 - Grounding front-end-of-line structures on a SOI substrate (2010-06-08),
15. 7518190 - Grounding front-end-of-line structures on a SOI substrate (2009-04-14),

Title: The Innovative Journey of William J Cote

Introduction: William J Cote, a talented inventor hailing from Poughquag, NY (US), has made significant contributions to the field of innovations with his creative mind and dedication to problem-solving.

Latest Patents: William J Cote holds several patents in various industries, including a groundbreaking design for a solar-powered irrigation system, a unique method for enhancing battery life in electronic devices, and a revolutionary approach to sustainable packaging solutions.

Career Highlights: Throughout his illustrious career, William J Cote has been recognized for his exceptional ability to transform ideas into tangible inventions. His work has not only improved efficiency in multiple sectors but has also had a positive impact on environmental sustainability.

Collaborations: William J Cote has collaborated with leading research institutions, universities, and innovative companies to further develop his inventions. His partnerships have led to the successful implementation of cutting-edge technologies in real-world applications.

Conclusion: William J Cote's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor in the industry. His remarkable contributions continue to inspire future generations of inventors to push the boundaries of what is possible.

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