The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Nov. 26, 2012
International Business Machines Corporation, Armonk, NY (US);
Effendi Leobandung, Wappingers Falls, NY (US);
William Cote, Poughquag, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Young-Hee Kim, Mohegan Lake, NY (US);
Dae-Gyu Park, Poughquag, NY (US);
Theodorus Eduardus Standaert, Clifton Park, NY (US);
Kenneth Jay Stein, Sandy Hook, CT (US);
YS Suh, Poughquag, NY (US);
Min Yang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of fabricating replacement metal gate transistors using bi-layer a hardmask are disclosed. By utilizing a bi-layer hardmask comprised of a first layer of nitride, followed by a second layer of oxide, the topography issues caused by transition regions of gates are mitigated, which simplifies downstream processing steps and improves yield.