The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Nov. 30, 2012
International Business Machines Corporation, Armonk, NY (US);
William Cote, Poughquag, NY (US);
Johnathan E. Faltermeier, Delanson, NY (US);
Babar A. Khan, Ossining, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Theodorus E. Standaert, Clifton Park, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method including providing fins etched from a semiconductor substrate and covered by an oxide layer and a nitride layer, the oxide layer being located between the fins and the nitride layer, removing a portion of the fins to form an opening, forming a dielectric spacer on a sidewall of the opening, and filling the opening with a fill material, wherein a top surface of the fill material is substantially flush with a top surface of the nitride layer. The method may further include forming a deep trench capacitor in-line with one of the fins, removing the nitride layer to form a gap between the fins and the fill material, wherein the fill material has re-entrant geometry extending over the gap, and removing the re-entrant geometry and causing the gap between the fins and the fill material to widen.