Gaithersburg, MD, United States of America

Vladimir Ivantsov



Average Co-Inventor Count = 5.3

ph-index = 8

Forward Citations = 243(Granted Patents)


Location History:

  • Gaithersberg, MD (US) (2012)
  • Gaithersburg, MD (US) (2003 - 2013)
  • Adelphi, MD (US) (2014)
  • Beltsville, MD (US) (2010 - 2016)
  • Oceanside, CA (US) (2022)
  • Hyattsville, MD (US) (2015 - 2023)

Company Filing History:


Years Active: 2003-2023

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20 patents (USPTO):

Title: Innovations of Vladimir Ivantsov in the Field of Indium Nitride Growth

Introduction

Vladimir Ivantsov is a prominent inventor based in Gaithersburg, MD, with an impressive portfolio of 20 patents to his name. His work primarily focuses on advancements in the growth of semiconductor materials, particularly indium nitride, through innovative methods and apparatus.

Latest Patents

One of his latest patents, titled "HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby," introduces a hydride phase vapor epitaxy (HVPE) growth apparatus. This invention outlines a reactor that features specialized zones for generation, accumulation, and growth. The process begins with the generation of indium source materials inside the reactor, where a reactive gas interacts with an indium source. This leads to the production of indium-containing compounds that are cooled and collected. Furthermore, the vapor formed from the evaporation of the condensate aids in the growth of indium nitride in the designated growth zone.

Another significant method developed by Ivantsov involves producing composite GaN nanocolumns and light-emitting structures. This method enables the growth of highly aligned, uniform cross-section semiconductor composite nanocolumns on a substrate. The process includes forming faceted pyramidal pits and initiating nucleation, allowing the growth of nanocolumns that can be used for advanced device structures or light-emitting applications.

Career Highlights

Throughout his career, Ivantsov has contributed to significant advancements in semiconductor technologies. His innovative approaches and methodologies have facilitated the development of high-quality planar device structures, making a substantial impact within the field.

Collaborations

During his professional journey, Ivantsov has worked alongside notable colleagues, including Vitali Soukhoveev and Vladimir A. Dmitriev. His associations with leading organizations such as Ostendo Technologies, Inc. and Technologies and Devices International, Inc. have further propelled his research and innovations.

Conclusion

Vladimir Ivantsov stands out as a leading innovator in the semiconductor industry. His extensive patents and collaborative efforts highlight his commitment to advancing the field of material growth, particularly in indium nitride technologies. Through his pioneering work, Ivantsov continues to inspire future developments in the realm of semiconductor innovations.

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