The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Jun. 13, 2008
Yuri V. Melnik, Rockville, MD (US);
Vitali Soukhoveev, Gaithersberg, MD (US);
Vladimir Ivantsov, Gaithersberg, MD (US);
Katie Tsvetkov, North Potomac, MD (US);
Vladimir a Dmitriev, Gaithersberg, MD (US);
Yuri V. Melnik, Rockville, MD (US);
Vitali Soukhoveev, Gaithersberg, MD (US);
Vladimir Ivantsov, Gaithersberg, MD (US);
Katie Tsvetkov, North Potomac, MD (US);
Vladimir A Dmitriev, Gaithersberg, MD (US);
Freiberger Compound Materials GmbH, Freiberg/Sachsen, DE;
Abstract
Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.