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Freiberg, Germany

Freiberger Compound Materials Gmbh

USPTO Granted Patents = 42

% Expired Patents = 14.3

EPO Patents = 26

Forward Citations = 340

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52 inventors (with patents filed for the assignee):

Stefan Eichler (17 out of 18 patents)

Frank Habel (14 out of 14 patents)

Berndt Weinert (9 out of 12 patents)

4. Gunnar Leibiger (9 out of 9 patents)

5. Ferdinand Scholz (7 out of 9 patents)

6. André Kleinwechter (6 out of 6 patents)

7. Ralf Hammer (6 out of 8 patents)

8. Thomas Bünger (6 out of 6 patents)

9. Max Scheffer-Czygan (5 out of 5 patents)

10. Peter Brückner (5 out of 5 patents)

11. Ulrich Kretzer (5 out of 5 patents)

12. Vladimir A Dmitriev (4 out of 34 patents)

13. Manfred Jurisch (4 out of 5 patents)

14. Frank Börner (4 out of 4 patents)

15. Yuri V Melnik (4 out of 22 patents)

Core Competencies:

Gallium Arsenide Substrate

III-N Templates

Vapour Phase Epitaxy

Doped III-N Bulk Crystal

Single Crystal Manufacturing

Group III Nitride Semiconductors

Crystal Lattice Curvature

AlGaN Single Crystals

Doped Semiconductor Single Crystals

Crystallographic Plane Orientation

Marangoni Drying

Wire Sawing

42 patents: Sort by Forward Citations

1. 12205815 - Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity (2025-01-21),

2. 12168839 - Growth of A-B crystals without crystal lattice curvature (2024-12-17),

3. 11965266 - Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations (2024-04-23),

4. 11505847 - Method and apparatus for Ga-recovery (2022-11-22),

5. 11170989 - Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity (2021-11-09),

6. 10883191 - Method for producing III-N templates and the reprocessing thereof and III-N template (2021-01-05),

7. 10767255 - Device and method of evaporating a material from a metal melt (2020-09-08),

8. 10662549 - Growth of A-B crystals without crystal lattice curvature (2020-05-26),

9. 10584427 - Processes for producing III-N single crystals, and III-N single crystal (2020-03-10),

10. 10460924 - Process for producing a gallium arsenide substrate which includes marangoni drying (2019-10-29),

11. 10309037 - Method for producing III-N templates and the reprocessing thereof and III-N template (2019-06-04),

12. 9896779 - Method for producing III-N single crystals, and III-N single crystal (2018-02-20),

13. 9856579 - Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy (2018-01-02),

14. 9461121 - Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such (2016-10-04),

15. 9368585 - Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal (2016-06-14),

Freiberger Compound Materials GmbH is a leading global provider of innovative semiconductor compounds and advanced packaging solutions for a wide range of application areas. The company specializes in the development, production, and distribution of advanced materials that enable high-performance semiconductor devices. With a focus on quality, reliability, and customer satisfaction, Freiberger Compound Materials GmbH has become a trusted partner for leading semiconductor companies worldwide.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 22 2026

42 Patents

#1 in Freiberg

#1,219 in Germany

#16,315 in the World

Freiberg, Germany

Freiberger Compound Materials Gmbh

Forward Citations = 340

52 inventors:

Stefan Eichler (17 out of 18 patents)

Frank Habel (14 out of 14 patents)

Berndt Weinert (9 out of 12 patents)

4. Gunnar Leibiger (9 out of 9 patents)

5. Ferdinand Scholz (7 out of 9 patents)

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