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Freiberg, Germany

Freiberger Compound Materials Gmbh

USPTO Granted Patents = 42

% Expired Patents = 14.3

EPO Patents = 26

Forward Citations = 340

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52 inventors (with patents filed for the assignee):

Stefan Eichler (17 out of 18 patents)

Frank Habel (14 out of 14 patents)

Berndt Weinert (9 out of 12 patents)

4. Gunnar Leibiger (9 out of 9 patents)

5. Ferdinand Scholz (7 out of 9 patents)

6. André Kleinwechter (6 out of 6 patents)

7. Ralf Hammer (6 out of 8 patents)

8. Thomas Bünger (6 out of 6 patents)

9. Max Scheffer-Czygan (5 out of 5 patents)

10. Peter Brückner (5 out of 5 patents)

11. Ulrich Kretzer (5 out of 5 patents)

12. Vladimir A Dmitriev (4 out of 34 patents)

13. Manfred Jurisch (4 out of 5 patents)

14. Frank Börner (4 out of 4 patents)

15. Yuri V Melnik (4 out of 22 patents)

Core Competencies:

Gallium Arsenide

III-N Templates

Single Crystal Growth

Vapour Phase Epitaxy

Doped Semiconductor

Crystal Fabrication

Surface Oxide Layer

Crystal Lattice Curvature

AlGaN Crystals

Hydride-Gas Phase Epitaxy

Defect Density

Annealed Wafer

42 patents: Sort by Forward Citations

1. 12205815 - Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity (2025-01-21),

2. 12168839 - Growth of A-B crystals without crystal lattice curvature (2024-12-17),

3. 11965266 - Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations (2024-04-23),

4. 11505847 - Method and apparatus for Ga-recovery (2022-11-22),

5. 11170989 - Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity (2021-11-09),

6. 10883191 - Method for producing III-N templates and the reprocessing thereof and III-N template (2021-01-05),

7. 10767255 - Device and method of evaporating a material from a metal melt (2020-09-08),

8. 10662549 - Growth of A-B crystals without crystal lattice curvature (2020-05-26),

9. 10584427 - Processes for producing III-N single crystals, and III-N single crystal (2020-03-10),

10. 10460924 - Process for producing a gallium arsenide substrate which includes marangoni drying (2019-10-29),

11. 10309037 - Method for producing III-N templates and the reprocessing thereof and III-N template (2019-06-04),

12. 9896779 - Method for producing III-N single crystals, and III-N single crystal (2018-02-20),

13. 9856579 - Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy (2018-01-02),

14. 9461121 - Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such (2016-10-04),

15. 9368585 - Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal (2016-06-14),

Company Overview

Freiberger Compound Materials GmbH, based in Freiberg, Germany, specializes in the development and manufacturing of advanced semiconductor materials, particularly focusing on gallium arsenide substrates and Group III nitride semiconductors. The company is recognized for its expertise in vapour phase epitaxy and the production of high-quality AlGaN single crystals, which are essential for various applications in optoelectronics and high-frequency devices. Freiberger's innovations contribute significantly to the advancement of semiconductor technology, supporting industries that rely on cutting-edge materials.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

42 Patents

#1 in Freiberg

#1,223 in Germany

#16,354 in the World

Freiberg, Germany

Freiberger Compound Materials Gmbh

Forward Citations = 340

52 inventors:

Stefan Eichler (17 out of 18 patents)

Frank Habel (14 out of 14 patents)

Berndt Weinert (9 out of 12 patents)

4. Gunnar Leibiger (9 out of 9 patents)

5. Ferdinand Scholz (7 out of 9 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Freiberger Compound Materials Gmbh. Retrieved from https://idiyas.com/company/freiberger-compound-materials

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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