Peter Brückner

Title: The Innovations of Peter Brückner

Introduction

Peter Brückner is a notable inventor based in Tettnang, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of III-N materials. With a total of 5 patents, his work has advanced the manufacturing processes of high-quality semiconductor substrates.

Latest Patents

Brückner's latest patents include a process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate. This innovative process allows for the deposition of a doped crystalline III-N layer on a substrate in a reactor, ensuring a homogeneous distribution of dopants and charge carriers. Another significant patent involves an epitaxial growth process for producing thick III-N layers, which enhances surface quality through intentional misorientation and adjustments in the growth conditions.

Career Highlights

Throughout his career, Peter Brückner has worked with prominent companies such as Freiberger Compound Materials GmbH and Osram Opto Semiconductors GmbH. His expertise in semiconductor materials has positioned him as a key figure in the industry, contributing to advancements in device performance and quality.

Collaborations

Brückner has collaborated with notable colleagues, including Frank Habel and Ferdinand Scholz. These partnerships have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.

Conclusion

Peter Brückner's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence the development of high-quality III-N materials and devices.