The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Dec. 21, 2006
Frank Habel, Freiberg, DE;
Ferdinand Scholz, Ulm, DE;
Barbara Neubert, Ulm, DE;
Peter Brückner, Tettnang, DE;
Thomas Wunderer, Waltenhofen, DE;
Frank Habel, Freiberg, DE;
Ferdinand Scholz, Ulm, DE;
Barbara Neubert, Ulm, DE;
Peter Brückner, Tettnang, DE;
Thomas Wunderer, Waltenhofen, DE;
Freiberger Compound Materials GmbH, Freiberg, DE;
Abstract
In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.