The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
May. 05, 2006
Ferdinand Scholz, Ulm, DE;
Peter Brückner, Tettnang, DE;
Frank Habel, Freiberg, DE;
Matthias Peter, Alteglofsheim, DE;
Klaus Köhler, Freiburg, DE;
Ferdinand Scholz, Ulm, DE;
Peter Brückner, Tettnang, DE;
Frank Habel, Freiberg, DE;
Matthias Peter, Alteglofsheim, DE;
Klaus Köhler, Freiburg, DE;
Freiberger Compound Materials GmbH, Freiberg, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.