The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Mar. 21, 2013
Applicant:

Freiberger Compound Materials Gmbh, Freiburg, DE;

Inventors:

Marit Gründer, Berlin, DE;

Frank Brunner, Berlin, DE;

Eberhard Richter, Berlin, DE;

Frank Habel, Freiberg, DE;

Markus Weyers, Wildau, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); C30B 25/16 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); C30B 25/10 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C30B 25/04 (2013.01); C30B 25/10 (2013.01); C30B 25/18 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02436 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 29/2003 (2013.01); Y10T 428/24851 (2015.01);
Abstract

The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.


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