Berlin, Germany

Marit Gründer


 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2018-2020

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2 patents (USPTO):Explore Patents

Title: Marit Gründer: A Trailblazer in III-N Single Crystal Technology

Introduction

Marit Gründer is a distinguished inventor based in Berlin, Germany, renowned for her groundbreaking work in the field of III-N single crystal technology. With two patents to her name, her innovative contributions are pivotal in advancing materials used in various applications, including optoelectronics and high-power devices.

Latest Patents

Gründer's latest patents encompass advanced processes for producing III-N single crystals. Her first patent details processes that ensure the quality and properties of III-N single crystals, which include elements from the third main group of the periodic table such as Aluminum (Al), Gallium (Ga), and Indium (In). This patent outlines a method wherein the resulting III-N single crystal adheres optimally to a substrate, and maintains low deformation values both at elevated temperatures and at room temperature. Her second patent further elaborates on methods for producing III-N templates and single crystals, emphasizing the adjustment of specific parameters during crystal growth to achieve flawless crystals that can vary in thickness.

Career Highlights

Marit Gründer is currently affiliated with Freiberger Compound Materials GmbH, a company that specializes in the development of advanced materials. Since joining the firm, her research and innovations have significantly enhanced the company's reputation in the field of semiconductor materials. Her commitment to excellence in research has positioned her as a respected figure in the technological community.

Collaborations

Throughout her career, Gründer has collaborated with notable colleagues, including Frank Brunner and Eberhard Richter. These partnerships have fostered a creative environment that promotes shared knowledge and expertise, ultimately leading to fruitful innovations in the development of III-N materials.

Conclusion

Marit Gründer's advancements in III-N single crystal technology reflect her dedication to innovation and excellence. Her patents not only contribute to the scientific community but also pave the way for future developments that could change the landscape of semiconductor technology. As she continues her work at Freiberger Compound Materials GmbH, the impact of her inventions is expected to resonate throughout the industry for years to come.

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