The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2020

Filed:

Jan. 30, 2018
Applicant:

Freiberger Compound Materials Gmbh, Freiberg, DE;

Inventors:

Marit Gründer, Berlin, DE;

Frank Brunner, Berlin, DE;

Eberhard Richter, Berlin, DE;

Frank Habel, Freiberg, DE;

Markus Weyers, Wildau, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); C30B 29/40 (2006.01); C30B 25/10 (2006.01); C30B 25/04 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C30B 25/04 (2013.01); C30B 25/10 (2013.01); C30B 25/18 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02436 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 29/2003 (2013.01); Y10T 428/24851 (2015.01);
Abstract

The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation εin the range of <0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation εin the range of <0.


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