Freiberger Compound Materials Gmbh

Marit Gründer

Frank Habel

Markus Weyers

Eberhard Richter

Frank Brunner

The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation &#x3b5;in the range of &#x3c;0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation &#x3b5;in the range of &#x3c;0.

Processes for producing III-N single crystals, and III-N single crystal

The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

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Berlin, Germany

Marit Gründer