The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2021

Filed:

May. 30, 2019
Applicant:

Freiberger Compound Materials Gmbh, Freiberg, DE;

Inventors:

Frank Lipski, Reutlingen, DE;

Ferdinand Scholz, Ulm, DE;

Martin Klein, Ulm, DE;

Frank Habel, Freiberg, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C30B 25/16 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); C30B 25/10 (2006.01); C30B 25/04 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C30B 25/04 (2013.01); C30B 25/10 (2013.01); C30B 25/18 (2013.01); C30B 29/40 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02436 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 29/2003 (2013.01); Y10T 428/24851 (2015.01);
Abstract

There is provided a template comprising a substrate comprising sapphire and at least one III-N crystal layer, wherein III denotes at least one element of the main group III of the periodic table of the elements, selected from the group of Al, Ga and In, wherein in a region of the at least one III-N layer above the substrate comprises a mask material as an interlayer, wherein the III-N crystal layer of the template is defined by one or both of the following values (i)/(ii) of the deformation ε: (i) at room temperature the εvalue lies in the range of <0; and (ii) at growth temperature the εvalue lies in the range of ε≤0.


Find Patent Forward Citations

Loading…