The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Oct. 11, 2007
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Oleg V. Kovalenkov, Montgomery Village, MD (US);
Vladimir Ivantsov, Beltsville, MD (US);
Lisa Shapovalov, Gaithersburg, MD (US);
Alexander L. Syrkin, Montgomery Village, MD (US);
Anna Volkova, Gaithersburg, MD (US);
Vladimir Sizov, Gaithersburg, MD (US);
Alexander Usikov, Gaithersburg, MD (US);
Vitali A. Soukhoveev, Gaithersburg, MD (US);
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Oleg V. Kovalenkov, Montgomery Village, MD (US);
Vladimir Ivantsov, Beltsville, MD (US);
Lisa Shapovalov, Gaithersburg, MD (US);
Alexander L. Syrkin, Montgomery Village, MD (US);
Anna Volkova, Gaithersburg, MD (US);
Vladimir Sizov, Gaithersburg, MD (US);
Alexander Usikov, Gaithersburg, MD (US);
Vitali A. Soukhoveev, Gaithersburg, MD (US);
Ostendo Technologies, Inc., Carlsbad, CA (US);
Abstract
HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.