The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jul. 15, 2009
Alexander Usikov, Rockville, MD (US);
Alexander Syrkin, Montgomery Village, MD (US);
Robert G. W. Brown, Tustin, CA (US);
Hussein S. El-ghoroury, Carlsbad, CA (US);
Philippe Spiberg, Laguna Beach, CA (US);
Vladimir Ivantsov, Adelphi, MD (US);
Oleg Kovalenkov, Montgomery Village, MD (US);
Lisa Shapovalova, Gaithersburg, MD (US);
Alexander Usikov, Rockville, MD (US);
Alexander Syrkin, Montgomery Village, MD (US);
Robert G. W. Brown, Tustin, CA (US);
Hussein S. El-Ghoroury, Carlsbad, CA (US);
Philippe Spiberg, Laguna Beach, CA (US);
Vladimir Ivantsov, Adelphi, MD (US);
Oleg Kovalenkov, Montgomery Village, MD (US);
Lisa Shapovalova, Gaithersburg, MD (US);
Ostendo Technologies, Inc., Carlsbad, CA (US);
Abstract
A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.