This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Ostendo Technologies, Inc.. Active years: 2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2014
Title: Biography of Inventor Lisa Shapovalova
Introduction: Lisa Shapovalova is an accomplished inventor based in Gaithersburg, MD (US). She has made significant contributions to the field of materials science, particularly in the growth of non-polar and semi-polar gallium nitride.
Latest Patents: Lisa holds a patent for the "Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)." This innovative method involves growing planar non-polar m-plane or semi-polar III-Nitride material on suitable substrates using hydride vapor phase epitaxy.
Career Highlights: Lisa is currently employed at Ostendo Technologies, Inc., where she continues to advance her research and development efforts. Her work focuses on improving the efficiency and quality of III-Nitride materials, which are essential for various electronic and optoelectronic applications.
Collaborations: Throughout her career, Lisa has collaborated with notable colleagues, including Alexander Usikov and Alexander L Syrkin. These partnerships have fostered a productive research environment and have led to significant advancements in their field.
Conclusion: Lisa Shapovalova's contributions to the field of materials science and her innovative patent demonstrate her commitment to advancing technology. Her work at
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile