The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Mar. 27, 2007
Alexander L. Syrkin, Montgomery Village, MD (US);
Vladimir Ivantsov, Beltsville, MD (US);
Alexander Usikov, Gaithersburg, MD (US);
Oleg Kovalenkov, Montgomery Village, MD (US);
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Alexander L. Syrkin, Montgomery Village, MD (US);
Vladimir Ivantsov, Beltsville, MD (US);
Alexander Usikov, Gaithersburg, MD (US);
Oleg Kovalenkov, Montgomery Village, MD (US);
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Technologies and Devices International, Inc., Silver Springs, MD (US);
Abstract
Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. A HVPE growth apparatus includes generation, accumulation and growth zones. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is transported to the accumulation zone where it cools and condenses into a source material having an indium-containing compound. The source material is collected in the accumulation zone and evaporated. Vapor or gas resulting from evaporation of the source material forms reacts with a second reactive gas in the growth zone for growth of ternary and quaternary materials including indium gallium nitride, indium aluminum nitride, and indium gallium aluminum nitride.