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Silver Springs, MD, United States of America

Technologies and Devices International, Inc.

USPTO Granted Patents = 24

Forward Citations = 553

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20 inventors (with patents filed for the assignee):

Vladimir A Dmitriev (24 out of 34 patents)

Yuri V Melnik (16 out of 22 patents)

Vladimir Ivantsov (8 out of 20 patents)

4. Audrey E Nikolaev (8 out of 8 patents)

5. Konstantin V Vassilevski (8 out of 9 patents)

6. Vitali Soukhoveev (7 out of 16 patents)

7. Katie Tsvetkov (6 out of 9 patents)

8. Denis V Tsvetkov (6 out of 8 patents)

9. Andrey E Nikolaev (5 out of 6 patents)

10. Alexander L Syrkin (2 out of 13 patents)

11. Oleg V Kovalenkov (1 out of 8 patents)

12. Alexander Usikov (1 out of 8 patents)

13. Kaite Tsvetkov (1 out of 1 patent)

14. Karim Mynbaev (1 out of 1 patent)

15. Stephen Saddow (1 out of 1 patent)

24 patents: Sort by Forward Citations

1. 7727333 - HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby (2010-06-01),

2. 7670435 - Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE (2010-03-02),

3. 7611586 - Reactor for extended duration growth of gallium containing single crystals (2009-11-03),

4. 7501023 - Method and apparatus for fabricating crack-free Group III nitride semiconductor materials (2009-03-10),

5. 7279047 - Reactor for extended duration growth of gallium containing single crystals (2007-10-09),

6. 6936357 - Bulk GaN and ALGaN single crystals (2005-08-30),

7. 6849862 - III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer (2005-02-01),

8. 6706119 - Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE (2004-03-16),

9. 6660083 - Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE (2003-12-09),

10. 6656285 - Reactor for extended duration growth of gallium containing single crystals (2003-12-02),

11. 6656272 - Method of epitaxially growing submicron group III nitride layers utilizing HVPE (2003-12-02),

12. 6616757 - Method for achieving low defect density GaN single crystal boules (2003-09-09),

13. 6613143 - Method for fabricating bulk GaN single crystals (2003-09-02),

14. 6599133 - Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques (2003-07-29),

15. 6579359 - Method of crystal growth and resulted structures (2003-06-17),

Technologies and Devices International, Inc. is a leading provider of innovative technology solutions. We specialize in developing cutting-edge devices and software applications that empower businesses and individuals to achieve their goals more efficiently. With a strong focus on research and development, we consistently deliver high-quality products that cater to the ever-evolving needs of our clients. Through our expertise and dedication, we have established ourselves as a trusted partner in the technology industry. Visit our website to learn more about our wide range of products and services.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

24 Patents

#1 in Silver Springs, MD

#171 in Maryland

#13,401 in US

#25,825 in the World

Silver Springs, MD, United States of America

Technologies and Devices International, Inc.

Forward Citations = 553

20 inventors:

Vladimir A Dmitriev (24 out of 34 patents)

Yuri V Melnik (16 out of 22 patents)

Vladimir Ivantsov (8 out of 20 patents)

4. Audrey E Nikolaev (8 out of 8 patents)

5. Konstantin V Vassilevski (8 out of 9 patents)

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