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Silver Spring, MD, United States of America

Technologies and Devices International, Inc.

USPTO Granted Patents = 24

Forward Citations = 555

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20 inventors (with patents filed for the assignee):

Vladimir A Dmitriev (24 out of 34 patents)

Yuri V Melnik (16 out of 22 patents)

Vladimir Ivantsov (8 out of 20 patents)

4. Audrey E Nikolaev (8 out of 8 patents)

5. Konstantin V Vassilevski (8 out of 9 patents)

6. Vitali Soukhoveev (7 out of 16 patents)

7. Katie Tsvetkov (6 out of 9 patents)

8. Denis V Tsvetkov (6 out of 8 patents)

9. Andrey E Nikolaev (5 out of 6 patents)

10. Alexander L Syrkin (2 out of 13 patents)

11. Oleg V Kovalenkov (1 out of 8 patents)

12. Alexander Usikov (1 out of 8 patents)

13. Kaite Tsvetkov (1 out of 1 patent)

14. Karim Mynbaev (1 out of 1 patent)

15. Stephen Saddow (1 out of 1 patent)

24 patents: Sort by Forward Citations

1. 7727333 - HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby (2010-06-01),

2. 7670435 - Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE (2010-03-02),

3. 7611586 - Reactor for extended duration growth of gallium containing single crystals (2009-11-03),

4. 7501023 - Method and apparatus for fabricating crack-free Group III nitride semiconductor materials (2009-03-10),

5. 7279047 - Reactor for extended duration growth of gallium containing single crystals (2007-10-09),

6. 6936357 - Bulk GaN and ALGaN single crystals (2005-08-30),

7. 6849862 - III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer (2005-02-01),

8. 6706119 - Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE (2004-03-16),

9. 6660083 - Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE (2003-12-09),

10. 6656285 - Reactor for extended duration growth of gallium containing single crystals (2003-12-02),

11. 6656272 - Method of epitaxially growing submicron group III nitride layers utilizing HVPE (2003-12-02),

12. 6616757 - Method for achieving low defect density GaN single crystal boules (2003-09-09),

13. 6613143 - Method for fabricating bulk GaN single crystals (2003-09-02),

14. 6599133 - Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques (2003-07-29),

15. 6579359 - Method of crystal growth and resulted structures (2003-06-17),

Company Overview

Technologies and Devices International, Inc., based in Silver Spring, MD, specializes in the development and manufacturing of advanced technologies and devices across various sectors. The company focuses on innovative solutions in fields such as telecommunications, electronics, and medical devices, aiming to enhance functionality and efficiency. With a commitment to research and development, TDI leverages its expertise to address complex challenges and deliver cutting-edge products that meet the evolving needs of its clients.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

24 Patents

#5 in Silver Spring, MD

#181 in Maryland

#13,895 in US

#26,686 in the World

Silver Spring, MD, United States of America

Technologies and Devices International, Inc.

Forward Citations = 555

20 inventors:

Vladimir A Dmitriev (24 out of 34 patents)

Yuri V Melnik (16 out of 22 patents)

Vladimir Ivantsov (8 out of 20 patents)

4. Audrey E Nikolaev (8 out of 8 patents)

5. Konstantin V Vassilevski (8 out of 9 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Technologies and Devices International, Inc.. Retrieved from https://idiyas.com/company/technologies-and-devices-international

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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