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Newcastle upon Tyne, United Kingdom

Konstantin V Vassilevski

USPTO Granted Patents = 9

Average Co-Inventor Count = 4.0

ph-index = 9

Forward Citations = 191(Granted Patents)

Location History:

St. Petersburg, RU (2001)
St. Petersburg, GB (2002)
New Castle upon Tyne, GB (2002 - 2005)

Company Filing History:

Technologies and Devices International, Inc.

Technology and Devices International, Inc.

Years Active: 2001-2005

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6849862 - III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer (2005-02-01),

2. 6599133 - Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques (2003-07-29),

3. 6559467 - P-n heterojunction-based structures utilizing HVPE grown III-V compound layers (2003-05-06),

4. 6559038 - Method for growing p-n heterojunction-based structures utilizing HVPE techniques (2003-05-06),

5. 6555452 - Method for growing p-type III-V compound material utilizing HVPE techniques (2003-04-29),

6. 6479839 - III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer (2002-11-12),

7. 6476420 - P-N homojunction-based structures utilizing HVPE growth III-V compound layers (2002-11-05),

8. 6472300 - Method for growing p-n homojunction-based structures utilizing HVPE techniques (2002-10-29),

9. 6218269 - Process for producing III-V nitride pn junctions and p-i-n junctions (2001-04-17),

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