Technologies and Devices International, Inc.

Technology and Devices International, Inc.

Konstantin V Vassilevski

Vladimir A Dmitriev

Yuri V Melnik

Audrey E Nikolaev

Andrey E Nikolaev

A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlBInGaN, InGaNPAs, or AlBInGaNPAs.

III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer

A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of Al B In Ga N, InGaN P As , or Al B In Ga N P As .

Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques

Method for growing p-n heterojunction-based structures utilizing HVPE techniques

P-n heterojunction-based structures utilizing HVPE grown III-V compound layers

Method for growing p-type III-V compound material utilizing HVPE techniques

III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer

P-N homojunction-based structures utilizing HVPE growth III-V compound layers

Method for growing p-n homojunction-based structures utilizing HVPE techniques

A process is disclosed for producing pn junctions and p-i-n junctions from group III nitride compound semiconductor materials. The process comprises growing of pn junctions and p-i-n junctions by hydride vapor phase epitaxy employing hydride of nitrogen (ammonia, hydrozine) as a source of nitrogen and halides of group III metal as a source of metal. Mg is used as acceptor impurity to form p-type III-V nitride layers. The preferred sources for Ga and Al are Ga and Al metals, respectively. The process is carried out in the temperature range from 900 to 1200&deg; C.

Process for producing III-V nitride pn junctions and p-i-n junctions

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Newcastle upon Tyne, United Kingdom

Konstantin V Vassilevski