This inventor holds 1 USPTO granted patent. Top assignee: Technologies and Devices International, Inc.. Active years: 2003.
Company Filing History:
Years Active: 2003
Title: Karim Mynbaev: Innovator in Crystal Growth Technology
Introduction
Karim Mynbaev is a notable inventor based in St. Petersburg, Russia. He has made significant contributions to the field of semiconductor technology, particularly in the area of crystal growth. His innovative methods have the potential to enhance the performance of semiconductor materials.
Latest Patents
Karim Mynbaev holds a patent for a method of crystal growth and the resulting structures. This patent describes a technique for fabricating monocrystal material with a bandgap width exceeding 1.8 eV. The method involves processing a monocrystal semiconductor wafer to develop a porous layer through electrolytic treatment under direct current and UV illumination. Epitaxial growth of a monocrystal layer on this porous layer results in semiconductor material with reduced stress and improved characteristics compared to growth on non-porous layers and substrates. Additionally, the patent includes a semiconductor device structure comprising at least one layer of porous group III material.
Career Highlights
Karim Mynbaev is associated with Technologies and Devices International, Inc., where he applies his expertise in semiconductor technology. His work focuses on advancing methods that improve the quality and performance of semiconductor materials.
Collaborations
Karim has collaborated with notable professionals in his field, including Vladimir A Dmitriev and Denis V Tsvetkov. These collaborations have contributed to the development of innovative technologies in crystal growth.
Conclusion
Karim Mynbaev's contributions to semiconductor technology through his patented methods of crystal growth highlight his role as an influential inventor. His work continues to pave the way for advancements in the field, showcasing the importance of innovation in technology.