The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Jun. 02, 2000
Marina Mynbaeva, St. Petersburg, RU;
Denis Tsvetkov, Gaithersburg, MD (US);
Vladimir Dmitriev, Gaithersburg, MD (US);
Alexander Lebedev, St. Petersburg, RU;
Nataliya Savkina, St. Petersburg, RU;
Alexander Syrkin, Gaithersburg, MD (US);
Stephen Saddow, Starkville, MI (US);
Karim Mynbaev, St. Petersburg, RU;
Technologies and Devices International, Inc., Gaithersburg, MD (US);
Abstract
A method is disclosed for fabricating monocrystal material with the bandgap width exceeding 1.8 eV. The method comprises the steps of processing a monocrystal semiconductor wafer to develop a porous layer through electrolytic treatment of the wafer at direct current under UV-illumination, and epitaxially growing a monocrystal layer on said porous layer. Growth on porous layer produces semiconductor material with reduced stress and better characteristics than with the same material grown on non-porous layers and substrates. Also, semiconductor device structure comprising at least one layer of porous group III material is included.