The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Jun. 13, 2013
Ostendo Technologies, Inc., Carlsbad, CA (US);
Lisa Shapovalov, Gaithersburg, MD (US);
Oleg Kovalenkov, Gaithersburg, MD (US);
Vladimir Ivantsov, Hyattsville, MD (US);
Vitali Soukhoveev, Gaithersburg, MD (US);
Alexander Syrkin, Montgomery Village, MD (US);
Alexander Usikov, Rockville, MD (US);
Ostendo Technologies, Inc., Carlsbad, CA (US);
Abstract
A method to grow single phase group III-nitride articles including films, templates, free-standing substrates, and bulk crystals grown in semi-polar and non-polar orientations is disclosed. One or more steps in the growth process includes the use of additional free hydrogen chloride to eliminate undesirable phases, reduce surface roughness, and increase crystalline quality. The invention is particularly well-suited to the production of single crystal (11.2) GaN articles that have particular use in visible light emitting devices.