Sunnyvale, CA, United States of America

Vijay Parthasarathy

USPTO Granted Patents = 61 

 

Average Co-Inventor Count = 2.6

ph-index = 15

Forward Citations = 562(Granted Patents)

Forward Citations (Not Self Cited) = 455(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Phoenix, AZ (US) (2003 - 2009)
  • Mountain View, CA (US) (2011 - 2016)
  • Palo Alto, CA (US) (2007 - 2017)
  • Sunnyvale, CA (US) (2014 - 2023)

Company Filing History:


Years Active: 2003-2023

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Areas of Expertise:
LDMOS Transistors
High Voltage Transistors
Power Integrated Circuits
Field-Effect Transistors
Semiconductor Devices
Vertical Transistor Structures
Gate Pullback Techniques
Deep Trench Insulated Gate Bipolar Transistors
Checkerboarded Layouts
Reduced Gate Capacitance
Sensing FETs
ESD Protection Devices
61 patents (USPTO):Explore Patents

Title: **Vijay Parthasarathy: Innovator in LDMOS Technology**

Introduction

Vijay Parthasarathy, based in Sunnyvale, CA, is a distinguished inventor with an impressive portfolio of 61 patents primarily focused on advancements in LDMOS transistor technology. His innovative contributions have significantly impacted the semiconductor industry, leading to various enhancements in device performance and reliability.

Latest Patents

Among his latest patents, one notable invention is the LDMOS transistor with breakdown voltage clamps. This device features a lateral double-diffused metal-oxide-semiconductor (LDMOS) structure that incorporates a breakdown voltage clamp, a drain n+ region, a source n+ region, a gate, and a p-type reduced surface field (PRSF) layer with one or more bridge portions extending below the drain n+ region. Moreover, he has developed another LDMOS transistor featuring a drain n+ region, a source n+ region, a gate, an n-type reduced surface field (NRSF) layer, a PRSF layer, and a p-type buried layer (PBL) disposed beneath the PRSF layer in a strategic thickness orientation. Additionally, Vijay has devised a multi-transistor device that includes first and second LDMOS transistors with respective drift regions, separated in a thickness direction by a shared RESURF layer, showcasing his capability to integrate complex functionalities into semiconductor devices.

Career Highlights

Vijay's professional journey includes significant tenure at leading technology firms such as Power Integrations, Inc. and Freescale Semiconductor, Inc. His work at these organizations has been pivotal in driving forward semiconductor innovation, particularly in LDMOS technologies that are fundamental to modern electronic devices.

Collaborations

Throughout his career, Vijay Parthasarathy has collaborated with esteemed colleagues including Sujit Banerjee and Vishnu Khemka. These partnerships have allowed for the exchange of ideas and expertise, further enhancing the innovative processes behind his patented technologies.

Conclusion

Vijay Parthasarathy stands out as a prolific inventor whose contributions to the field of LDMOS technology have greatly influenced the advancement of semiconductor applications. With a robust portfolio of patents and significant industry experience, he continues to be an inspiring figure in the world of innovation.

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