The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
May. 23, 2017
Maxim Integrated Products, Inc., San Jose, CA (US);
John Xia, Fremont, CA (US);
Marco A. Zuniga, Berkeley, CA (US);
Badredin Fatemizadeh, Palo Alto, CA (US);
Vijay Parthasarathy, Sunnyvale, CA (US);
Maxim Integrated Products, Inc., San Jose, CA (US);
Abstract
A lateral double-diffused metal-oxide-semiconductor field effect transistor includes a silicon semiconductor structure, first and second gate structures, and a trench dielectric layer. The first and second gate structures are disposed on the silicon semiconductor structure and separated from each other in a lateral direction. The trench dielectric layer is disposed in a trench in the silicon semiconductor structure and extends at least partially under each of the first and second gate structures in a thickness direction orthogonal to the lateral direction.